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Memory Circuit Design Engineer

Memory Circuit Design Engineer

CompanyBroadcom Limited
LocationIrvine, CA, USA
Salary$73000 – $117000
TypeFull-Time
Degrees
Experience LevelJunior, Mid Level

Requirements

  • Working Knowledge of Common memory types such as SRAM, RF, ROM and familiarity with CMOS digital circuits
  • Good understanding of transistor level circuit behavior and device physics
  • Knowledge of signal integrity, EM/IR, and reliability issues
  • Understanding of memory behavioral and physical models is a plus
  • Understanding of DFT schemes and chip level integration is a plus
  • Familiarity with test setups, silicon testing and debug is a plus
  • Comfortable in running simulators, writing automation scripts, and are tools savvy
  • Good communication, interpersonal, and leadership skills
  • Motivated, self-driven and good at multi-tasking

Responsibilities

  • Analyze different memory architectures and highlight the tradeoffs
  • Design and build memory or circuit blocks at the gate or transistor level
  • Simulate and analyze the circuit design using transistor level simulators
  • Extract the layout and perform post-layout simulations and verification
  • Floorplan physical implementation and leafcell layout integration to build the physical macro
  • Integrate characterization flow to extract timing and power information
  • Develop scripts to automate characterization flow, simulations, and verification
  • Specify and verify various behavioral and physical memory models
  • Document the design specifications, behavioral description, and timing diagrams
  • Specify silicon test plan and correlate silicon to simulation data
  • Help debug silicon issues

Preferred Qualifications

  • Understanding of memory behavioral and physical models is a plus
  • Understanding of DFT schemes and chip level integration is a plus
  • Familiarity with test setups, silicon testing and debug is a plus